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Journal Articles

Real-time monitoring of oxidation processes on the Si(001) surface using O $_{2}$ gas under 1000 K by synchrotron radiation photoemission spectroscopy

Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden

Surface Science, 566-568(Part.2), p.1124 - 1129, 2004/09

https://doi.org/10.1016/j.susc.2004.06.069

Times Cited Count：5 Percentile：29.73(Chemistry, Physical)

The Si(001) oxidaion is an important reaction for not only semiconductor technology but also surface science. It is known that the growth mode forming oxide-layers is divided into two regions depending on surface temperature conditions. One is passive oxidation and the other is two dimensional island growth including SiO desorption. Since the oxygen uptake measurements have been measured in many reported studies, Si oxidatuion states related to the growth of oxide-layers have not been clarified yet. In order to measure the time evolution of Si oxidation states depending on the surface temperature, we have performed the real-time photoemission measurements using synchrotron radiation at SUREAC2000 in SPring-8 . We found that the Si $^{4+}$ states was formed at the early oxidation stage in the two dimiensional island regions.

Journal Articles

Real-time monitoring of oxidation on the Ti(0001) surface by synchrotron radiation photoelectron spectroscopy and RHEED-AES

Takakuwa, Yuji*; Ishizuka, Shinji*; Yoshigoe, Akitaka; Teraoka, Yuden; Yamauchi, Yasuhiro*; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*

Applied Surface Science, 216(1-4), p.395 - 401, 2003/06

https://doi.org/10.1016/S0169-4332(03)00453-7

Times Cited Count：19 Percentile：65.52(Chemistry, Physical)

Real-time in-situ observation using photoelectron spectroscopy for elementary processes of Ti(0001) oxidation by O $_{2}$ molecules has been performed at the surface reaction analysis apparatus installed at the BL23SU in the SPring-8. And the real-time observation has been also performed by RHEED-AES methods at Tohoku University. The partial pressure region of oxygen was from 2x10 $^{-7}$ Torr to 8x10 $^{-8}$ Torr. The surface temperature was 473 K and 673 K. The variation from clean Ti surface toward TiO $_{2}$ was comfirmed by observation of Ti-2p and O-1s photoelectron spectra. Reflected electron intensity and O-KLL Auger electron intensity oscillated in the RHEED-AES measurements. These facts revealed that the surface morphological change of the oxidized Ti(0001) surface was associated not only with a disappearance of the surface metallic layer but also with a change of the oxidation state.